This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore a remarkable manufacturing reproducibility. This new improved device has b.
Type STD100N03L STD100N03L-1
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Package
ID Pw
VDSSS 30 V 30 V
RDS(on)
<0.0055 Ω 80 A(1) 110 W <0.0055 Ω 80 A(1) 110 W
3 1
1 3 2
100%AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) LOGIC LEVEL THRESHOLD
DPAK
IPAK
Description
This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore a remarkable manufacturing reproducibility. This new improved device has been s.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD100N03L |
STMicroelectronics |
N-CHANNEL MOSFET | |
2 | STD100N10F7 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STD100N10F7 |
INCHANGE |
N-Channel MOSFET | |
4 | STD100N10LF7AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
5 | STD100N3LF3 |
ST Microelectronics |
N-channel Power MOSFET | |
6 | STD100NH02L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
7 | STD100NH02L-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
8 | STD100NH03L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
9 | STD100 |
Schneider |
Duct Temperature Sensor | |
10 | STD100 |
Sirectifier Semiconductors |
Thyristor-Diode Modules | |
11 | STD10100S |
JILIN SINO |
TRENCH SCHOTTKY BARRIER DIODE | |
12 | STD10150C |
SANGDEST MICROELECTRONICS |
SCHOTTKY RECTIFIER |