STB80NF55L-08 - ST Microelectronics

STB80NF55L-08 N-CHANNEL POWER MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting tranINTERNAL SCHEMATIC DIAGRAM sistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. DataSheet4U.

Features

rce Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 55 55 ± 16 80 80 320 300 2 15 870
  –55 to 175 175 (1) Current Limited by Package (2) ISD ≤80A, di/dt ≤ 500A/µs, VDD =40V Tj ≤ TJMAX. (3) Starting Tj=25°C, ID=40A, VDD=40V DataShee Unit V V V A A A W W/°C V/ns mJ °C °C (q ) Pulse width limited by safe operating area April 2003 1/8 DataSheet4U.com www.DataSh.