This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram Ta.
Type STB80NF55-08T4 STP80NF55-08 STW80NF55-08
■
VDSS 55 V 55 V 55 V
RDS(on) max < 0.008 Ω < 0.008 Ω < 0.008 Ω
ID 80 A 80 A 80 A
1
1
2
3
3 2
TO-247
TO-220
Standard threshold drive
3 1
Application
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Switching applications
D²PAK
Description
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB80NF55-08 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STB80NF55-08-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
3 | STB80NF55-08AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STB80NF55-06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STB80NF55-06-1 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
6 | STB80NF55-06T |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
7 | STB80NF55-06T4 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | STB80NF55L-06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
9 | STB80NF55L-08 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
10 | STB80NF03L-04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
11 | STB80NF03L-04-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
12 | STB80NF03L-04T |
ST Microelectronics |
N-channel Power MOSFET |