STB80NF55-08 - ST Microelectronics

STB80NF55-08 N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK TO-263 I2PAK TO-262 3 1 2 TO-.

Features

Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 55 55 ± 20 80 57 320 300 2 870 -55 to 175 (1) Starting Tj = 25 oC, ID = 40A, VDD = 30V Unit V V V A A A W W/°C mJ °C (
•) Current limited by package (
•
•) Pulse width limited by safe operating area. March 2002 . 1/11 DataSheet4U.com www.DataSheet4U.com STB80NF55-08/-1 STP80NF55-08 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistanc.