STB30N65M2AG - STMicroelectronics

STB30N65M2AG N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STB30N65M2AG Product summary Order code S.

Features

Order code STB30N65M2AG VDS 650 V RDS(on) max. 0.18 Ω ID 20 A
• AEC-Q101 qualified
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected G(1) Applications
• Switching applications S(3) AM01475V1 Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STB30.