This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application .
Type STB30NF10 STP30NF10 STP30NF10FP
VDSS 100V 100V 100V
RDS(on) <0.045Ω <0.045Ω <0.045Ω
ID 35A 35A 35A
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
Description
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Applications
■ Switching application
3 2 1
TO-220
3 1
D2PAK.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB30NF20 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | STB30NF20 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STB30NF20L |
STMicroelectronics |
N-channel MOSFET | |
4 | STB30N10 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
5 | STB30N65DM6AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
6 | STB30N65M2AG |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STB30N65M5 |
STMicroelectronics |
Power MOSFET | |
8 | STB30N65M5 |
INCHANGE |
N-Channel MOSFET | |
9 | STB30N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STB30NE06L |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
11 | STB30NM50N |
STMicroelectronics |
Power MOSFET | |
12 | STB30NM60N |
STMicroelectronics |
N-channel MOSFET |