STB30N65M5 - STMicroelectronics

STB30N65M5 Power MOSFET

MDmesh V is a revolutionary Power MOSFET technology, which combines an innovative proprietary vertical process with the well known company’s PowerMESH™ horizontal layout. The resulting product has an extremely low onresistance, unmatched among silicon-based Power MOSFETs, making it especially suited for applications which require superior power density and o.

Features

Type STB30N65M5 STF30N65M5 STI30N65M5 STP30N65M5 STW30N65M5 VDSS @ TJMAX 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.139 Ω < 0.139 Ω < 0.139 Ω < 0.139 Ω < 0.139 Ω ID 1 3 3 1 2 21 A 21 A(1) 21 A 21 A 21 A 3 12 D²PAK TO-220FP I²PAK 1. Limited only by maximum temperature allowed
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■ 3 1 2 2 1 3 Worldwide best RDS(on)
*area Higher VDSS rating Excellent switching performance Easy to drive 100% avalanche tested High dv/dt capability TO-220 TO-247 Figure 1. Internal schematic diagram $ Application
■ Switching applications ' Description MDmesh V is a revolutionary Powe.