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STB30N65M2AG |
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| Part Number | STB30N65M2AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switc... |
| Features |
Order code STB30N65M2AG
VDS 650 V
RDS(on) max. 0.18 Ω
ID 20 A
• AEC-Q101 qualified • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected G(1) Applications • Switching applications S(3) AM01475V1 Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STB30... |
| Document |
 STB30N65M2AG Data Sheet
PDF 1.19MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STB30N65M5 |
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| 2 | STB30N65M5 |
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| 3 | STB30N65DM6AG |
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| 4 | STB30N10 |
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| 5 | STB30N80K5 |
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