This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. 3 2 1 TO-247 3 1 D²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary O.
Type
VDSS RDS(on)
ID
STP30NF20 200V 0.075Ω 30A
STW30NF20 200V 0.075Ω 30A
STB30NF20 200V 0.075Ω 30A
■ Gate charge minimized
■ 100% avalanche tested
■ Excellent figure of merit (RDS
*Qg)
■ Very good manufactuing repeability
■ Very low intrinsic capacitances
PTOT 125W 125W 125W
Application
■ Switching applications
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters.
3 2 1
TO.
·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB30NF20L |
STMicroelectronics |
N-channel MOSFET | |
2 | STB30NF10 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
3 | STB30N10 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
4 | STB30N65DM6AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
5 | STB30N65M2AG |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STB30N65M5 |
STMicroelectronics |
Power MOSFET | |
7 | STB30N65M5 |
INCHANGE |
N-Channel MOSFET | |
8 | STB30N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STB30NE06L |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
10 | STB30NM50N |
STMicroelectronics |
Power MOSFET | |
11 | STB30NM60N |
STMicroelectronics |
N-channel MOSFET | |
12 | STB30NM60ND |
STMicroelectronics |
N-channel MOSFET |