STB30NM60N - STMicroelectronics

STB30NM60N N-channel MOSFET

This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking 3.

Features

Type STB30NM60N STI30NM60N STF30NM60N STP30NM60N STW30NM60N VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max <0.13Ω <0.13Ω <0.13Ω <0.13Ω <0.13Ω ID 25A 25A 25A(1) 25A 25A PW 190 W 190 W 40 W 190 W 190 W 3 1 2 1 3 2 3 1 3 12 D²PAK 2 1 3 I²PAK TO-247 1. Limited only by maximum temperature allowed
■
■
■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Application
■ Figure 1. Internal schematic diagram Switching applications Description This series of devices is designed using the second generation of MDmesh™ Technology. This .