STB30NF20L - STMicroelectronics

STB30NF20L N-channel MOSFET

This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche charac.

Features

Order code VDSS RDS(on) ID STB30NF20L 200 V 0.075 Ω 30 A PTOT 150 W
■ Gate charge minimized
■ 100% avalanche tested
■ Excellent figure of merit (RDS
* Qg)
■ Very good manufacturing repeatability
■ Very low intrinsic capacitance Applications
■ Automotive Description This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resis.