STB24N60DM2 - STMicroelectronics

STB24N60DM2 N-CHANNEL POWER MOSFET

These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ S(3) AM01476v1 technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest .

Features

Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.20 Ω 18 A
• Extremely low gate charge and input capacitance
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
• Extremely high dv/dt and avalanche capabilities Applications G(1)
• Switching applications Description These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ S(3) AM01476v1 technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associat.