This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. Table 1. Device summary Marking 200N6F3 200N6F3 200N6F3 Package D2PAK I 2PAK Order codes STB200N6F3 STI200N6F3 STP200N6F3 Packaging Tape & reel Tube Tube TO-220 April .
Type STB200N6F3 STI200N6F3 STP200N6F3 VDSS 60 V 60 V 60 V RDS(on) < 3.6 mΩ < 3.9 mΩ < 3.9 mΩ ID 120 A
(1) (1)
Pw 330 W 330 W
3 1 2
120 A
120 A(1) 330 W TO-220
3 1
3 12
1. Value limited by wire bonding
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■
D2PAK
I2PAK
Ultra low on-resistance 100% avalanche tested
Application
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Switching applications Figure 1. Internal schematic diagram
Description
This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance.
Table 1.
Device summary
Marking 200N6F3 200N6F3 20.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB200N04 |
STMicroelectronics |
Power MOSFET | |
2 | STB200N4F3 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STB200NF03 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STB200NF03-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STB200NF04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
6 | STB200NF04-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
7 | STB200NF04L |
ST Microelectronics |
N-CHANNEL STripFET II MOSFET | |
8 | STB200NF04T4 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
9 | STB200NF04T4-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
10 | STB2045C |
SMC Diode |
SCHOTTKY RECTIFIER | |
11 | STB205L |
KODENSHI |
PNP Silicon Transistor | |
12 | STB2060C |
Sangdest Microelectronics |
SCHOTTKY RECTIFIER |