These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converter. Figure 1. Internal.
Order codes STB24NM60N
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VDSS (@Tjmax) 650 V
RDS(on) max. < 0.19 Ω
ID 17 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
3 1
D²PAK
Application
Switching applications
Description
These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converter. Figure 1. Internal schematic .
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB24NM60N ·FEATURES ·With To-263(D2PAK) package ·Low input cap.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB24NM65N |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STB24NM65N |
INCHANGE |
N-Channel MOSFET | |
3 | STB24N60DM2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STB24N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
5 | STB24N60M6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
6 | STB24N65M2 |
STMicroelectronics |
N-channel MOSFET | |
7 | STB24NF10 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
8 | STB200N04 |
STMicroelectronics |
Power MOSFET | |
9 | STB200N4F3 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STB200N6F3 |
ST Microelectronics |
Power MOSFETs | |
11 | STB200NF03 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
12 | STB200NF03-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |