STB24N65M2 - STMicroelectronics

STB24N65M2 N-channel MOSFET

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order codes Marking Package Packaging .

Features

Order codes STB24N65M2 STF24N65M2 STP24N65M2 VDS 650 V RDS(on) max 0.23 Ω ID 16 A
 Extremely low gate charge
 Excellent output capacitance (Coss) profile
 100% avalanche tested
 Zener-protected Applications
 Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order codes Marking Pack.