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This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been spec.
Type STB200N04
■
VDSS 40V
RDS(on) <0.0040Ω
ID 120A
Pw 300W
100% avalanche tested drive
1 3
www.DataSheet4U.com
■ Standard threshold
Description
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automotive applications.
D²PAK
Internal schematic diagram
Applic.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STB200N4F3 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 2 | STB200N6F3 |
ST Microelectronics |
Power MOSFETs |
|
| 3 | STB200NF03 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 4 | STB200NF03-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 5 | STB200NF04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 6 | STB200NF04-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 7 | STB200NF04L |
ST Microelectronics |
N-CHANNEL STripFET II MOSFET |
|
| 8 | STB200NF04T4 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 9 | STB200NF04T4-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 10 | STB2045C |
SMC Diode |
SCHOTTKY RECTIFIER |
|
| 11 | STB205L |
KODENSHI |
PNP Silicon Transistor |
|
| 12 | STB2060C |
Sangdest Microelectronics |
SCHOTTKY RECTIFIER |
|