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STB24N60DM2 |
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| Part Number | STB24N60DM2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ S(3) AM01476v1 technology: MDmesh II Plus™ low Qg. These revolut... |
| Features |
Order codes
STB24N60DM2 STP24N60DM2 STW24N60DM2
VDS @ TJmax
650 V
RDS(on) max
ID
0.20 Ω 18 A
• Extremely low gate charge and input capacitance • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • Extremely high dv/dt and avalanche capabilities Applications G(1) • Switching applications Description These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ S(3) AM01476v1 technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associat... |
| Document |
 STB24N60DM2 Data Sheet
PDF 668.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STB24N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
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| 2 | STB24N60M6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 3 | STB24N65M2 |
STMicroelectronics |
N-channel MOSFET |
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| 4 | STB24NF10 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
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| 5 | STB24NM60N |
STMicroelectronics |
Power MOSFET |
|