STB200NF03 - ST Microelectronics

STB200NF03 N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D²PAK TO-263 I²PAK TO-262 3 1 2 TO-.

Features

ge slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Operating Junction Temperature (
•) Pulse width limited by safe operating area. (
*
*) Current Limited by Package Value 30 30 ± 20 120 120 480 300 2.0 1.5 1.45 -55 to 175 Unit V V V A A A W W/°C V/ns J °C (1) ISD ≤120A, di/dt ≤400A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX (2) Starting T j = 25 oC, ID = 60 A, VDD = 25 V October 2002 1/14 www.DataSheet4U.com www.DataSheet4U.com DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulti.