Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 3.
Order codes
STB23NM50N STF23NM50N STP23NM50N STW23NM50N
VDSS (@Tjmax)
550 V
RDS(on) max.
< 0.19 Ω
ID 17 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
3 2 1
TO-220FP
3 2 1
TO-220
3 2.
STB23NM50N - INCHANGE
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB23NM50N ·FEATURES ·With To-263(D2PAK) package ·Low input cap.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STB23NM60N |
STMicroelectronics |
N-channel Power MOSFET |
|
| 2 | STB23NM60ND |
STMicroelectronics |
N-channel Power MOSFET |
|
| 3 | STB23NM60ND |
INCHANGE |
N-Channel MOSFET |
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| 4 | STB23N80K5 |
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| 5 | STB200N04 |
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| 6 | STB200N4F3 |
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| 7 | STB200N6F3 |
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Power MOSFETs |
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| 8 | STB200NF03 |
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N-CHANNEL POWER MOSFET |
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| 9 | STB200NF03-1 |
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N-CHANNEL POWER MOSFET |
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| 10 | STB200NF04 |
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N-CHANNEL POWER MOSFET |
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| 11 | STB200NF04-1 |
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N-CHANNEL POWER MOSFET |
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| 12 | STB200NF04L |
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N-CHANNEL STripFET II MOSFET |
|