STB200NF04L - ST Microelectronics

STB200NF04L N-CHANNEL STripFET II MOSFET

This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and lesscritical alignement steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifical.

Features

TYPE STB200NF04L STP200NF04L STB200NF04L-1 s s s Figure 1: Package RDS(on) 3.5 mΩ 3.8 mΩ 3.8 mΩ ID 120 A 120 A 120 A 3 1 2 VDSS 40 V 40 V 40 V TYPICAL RDS(on) = 3mΩ 100% AVALANCHE TESTED LOW THERESHOLD DRIVE 3 1 TO-220 D²PAK DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and lesscritical alignement steps therefore a remarkable manufacturing reproducibility. This new improved device has been specif.