This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 12 3 I2PAK www.DataSheet4U.com STP200NF0.
Type STB200NF04 STB200NF04-1 STP200NF04 s s Figure 1: Package ID 120 A 120 A 120 A Pw 310 W 310 W 310 W 3 3 1 2 VDSS 40 V 40 V 40 V RDS(on) < 0.0037 Ω < 0.0037 Ω < 0.0037 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED TO-220 1 D2PAK Figure 2: Internal Schematic Diagram APPLICATIONS www.DataSheet4U.com s HIGH CURRENT, HIGH SWITCHING SPEED s AUTOMOTIVE Table 2: Order Codes SALES TYPE STB200NF04T4 STB200NF04-1 STP200NF04 MARKING B200NF04 B200NF04 P200NF04 PACKAGE D2PAK I2PAK TO-220 PACKAGING TAPE & REEL TUBE TUBE Rev. 3 October 2004 1/15 www.DataSheet4U.com www.DataSheet4U.com DESCR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB200NF04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STB200NF04L |
ST Microelectronics |
N-CHANNEL STripFET II MOSFET | |
3 | STB200NF04T4 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STB200NF04T4-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STB200NF03 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
6 | STB200NF03-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
7 | STB200N04 |
STMicroelectronics |
Power MOSFET | |
8 | STB200N4F3 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STB200N6F3 |
ST Microelectronics |
Power MOSFETs | |
10 | STB2045C |
SMC Diode |
SCHOTTKY RECTIFIER | |
11 | STB205L |
KODENSHI |
PNP Silicon Transistor | |
12 | STB2060C |
Sangdest Microelectronics |
SCHOTTKY RECTIFIER |