STB23NM50N |
Part Number | STB23NM50N |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB23NM50N ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Mini... |
Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±25 17 11 68 PD Total Dissipation @TC=25℃ 125 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CH... |
Document |
STB23NM50N Data Sheet
PDF 199.39KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | STB23NM50N |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STB23NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STB23NM60ND |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STB23NM60ND |
INCHANGE |
N-Channel MOSFET | |
5 | STB23N80K5 |
STMicroelectronics |
N-Channel Power MOSFET |