STB185N55F3 - STMicroelectronics

STB185N55F3 N-CHANNEL POWER MOSFET

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size™” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low.

Features

Type STB185N55F3 STP185N55F3 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1) Pw 330W 330W 1. Value limited by wire bonding
■ Ultra low on-resistance
■ 100% avalanche tested Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size™” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Applications
■ Switching app.