STB18N65M5 - STMicroelectronics

STB18N65M5 N-channel Power MOSFET

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applicati.

Features

Order codes STB18N65M5 STD18N65M5
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■ VDSS @ TJmax 710 V RDS(on) max < 0.22 Ω ID 15 A TAB TAB 2 3 1 2 3 1 Worldwide best RDS(on)
* area Higher VDSS rating and high dv/dt capability Excellent switching performance 100% avalanche tested Figure 1. D2PAK DPAK Applications
■ Internal schematic diagram Switching applications $4!" Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extr.