This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status links STB18N60DM2 Product summ.
Order code
VDS
RDS(on) max.
STB18N60DM2
600 V
0.295 Ω
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
ID 12 A
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift conv.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB18N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | STB18N60M6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
3 | STB18N65M5 |
INCHANGE |
N-Channel MOSFET | |
4 | STB18N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STB18N20 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | STB18N55M5 |
INCHANGE |
N-Channel MOSFET | |
7 | STB18N55M5 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STB18NF25 |
ST Microelectronics |
N-Channel MOSFET | |
9 | STB18NF30 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
10 | STB18NM60N |
INCHANGE |
N-Channel MOSFET | |
11 | STB18NM60N |
ST Microelectronics |
Power MOSFET | |
12 | STB18NM60ND |
INCHANGE |
N-Channel MOSFET |