STB18N20 - ST Microelectronics

STB18N20 N-CHANNEL Power MOSFET

www.DataSheet4U.com STB18N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST B18N20 V DSS 200 V R DS(on) < 0.18 Ω ID 18 A s s s s s s s s s TYPICAL RDS(on) = 0.145 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZ.

Features

Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor St orage Temperature Max. Operating Junction Temperature o o o Value 200 200 ± 20 18 11 72 125 1 -65 to 150 150 Uni t V V V A A A W W/ o C o o C C (
•) Pulse width limited by safe operating area March 1996 1/10 STB18N20 THERMAL DATA R t hj-ca se R t hj- amb R t hj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ 1 62.5 0..