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lete This n-channel enhancement mode Power MOSFET is the latest refinement of so STMicroelectronics unique “single feature size™” b strip-based process with less critical alignment O steps and therefore a remarkable manufacturing - reproducibility. The resulting transistor shows ) extremely high packing density for low on t(s resistance, rugged avalanche cha.
Type
VDSS RDS(on)
ID
Pw
STB180N55F3 55V
) STP180N55F3 55V
3.5mΩ 120A(1) 330W 3.8mΩ 120A(1) 330W
t(s 1. Value limited by wire bonding
uc
■ Ultra low on-resistance d
■ 100% avalanche tested
Pro Description lete This n-channel enhancement mode Power
MOSFET is the latest refinement of
so STMicroelectronics unique “single feature size™” b strip-based process with less critical alignment O steps and therefore a remarkable manufacturing - reproducibility. The resulting transistor shows ) extremely high packing density for low on t(s resistance, rugged avalanche characteristics and c low gate.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STB180N55 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 2 | STB185N55 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 3 | STB185N55F3 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 4 | STB18N20 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 5 | STB18N55M5 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | STB18N55M5 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 7 | STB18N60DM2 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 8 | STB18N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 9 | STB18N60M6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 10 | STB18N65M5 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | STB18N65M5 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 12 | STB18NF25 |
ST Microelectronics |
N-Channel MOSFET |
|