STB180N55 - ST Microelectronics

STB180N55 N-CHANNEL Power MOSFET

This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate ch.

Features

Type STB180N55 STP180N55
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■ VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A (Note 1) 120A (Note 1) 3 1 1 2 3 ULTRA LOW ON-RESISTANCE 100% AVALANCHE TESTED D²PAK TO-220 Description This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications
■ HIGH CUR.