This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “single feature size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low ga.
Type STB185N55 STP185N55 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1)
3 1 2
1. Value limited by wire bonding
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■
3 1
Ultra low on-resistance 100% avalanche tested
TO-220
D2PAK
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “single feature size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
Internal schematic diagram
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB185N55F3 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | STB180N55 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
3 | STB180N55F3 |
STMicroelectronics |
N-CHANNEL MOSFET | |
4 | STB18N20 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
5 | STB18N55M5 |
INCHANGE |
N-Channel MOSFET | |
6 | STB18N55M5 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STB18N60DM2 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STB18N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
9 | STB18N60M6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
10 | STB18N65M5 |
INCHANGE |
N-Channel MOSFET | |
11 | STB18N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STB18NF25 |
ST Microelectronics |
N-Channel MOSFET |