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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain.
·Drain Current ID= 11A@ TC=25℃
·Drain Source Voltage-
: VDSS=600V(Min)
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
11
A
IDM
Pulse Drain Current
44
A
Ptot
Total Dissipation@TC=25℃
160
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHAR.
STB11NM60 - ST Microelectronics
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s Power.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STB11NM60-1 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | STB11NM60-1 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 3 | STB11NM60A-1 |
ST Microelectronics |
N-Channel MOSFET |
|
| 4 | STB11NM60FD |
ST Microelectronics |
N-Channel MOSFET |
|
| 5 | STB11NM60FD |
INCHANGE |
N-Channel MOSFET |
|
| 6 | STB11NM60FD-1 |
ST Microelectronics |
N-Channel MOSFET |
|
| 7 | STB11NM60N |
INCHANGE |
N-Channel MOSFET |
|
| 8 | STB11NM60N-1 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | STB11NM60T4 |
STMicroelectronics |
N-CHANNEL Power MOSFET |
|
| 10 | STB11NM80 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 11 | STB11N65M5 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | STB11N65M5 |
STMicroelectronics |
N-channel Power MOSFET |
|