STB11NM60 |
Part Number | STB11NM60 |
Manufacturer | INCHANGE |
Description | isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust... |
Features |
·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 11 A IDM Pulse Drain Current 44 A Ptot Total Dissipation@TC=25℃ 160 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHAR... |
Document |
STB11NM60 Data Sheet
PDF 262.91KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | STB11NM60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
2 | STB11NM60-1 |
INCHANGE |
N-Channel MOSFET | |
3 | STB11NM60-1 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
4 | STB11NM60A-1 |
ST Microelectronics |
N-Channel MOSFET | |
5 | STB11NM60FD |
ST Microelectronics |
N-Channel MOSFET |