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STB11NM60 |
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| Part Number | STB11NM60 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resista... |
| Features |
ers allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tstg Tj May 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
TO-220
TO-220FP
3 1
D PAK
2
3 12
I2PAK
INTERNAL SCHEMATIC DIAGRAM... |
| Document |
 STB11NM60 Data Sheet
PDF 775.73KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STB11NM60 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | STB11NM60-1 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | STB11NM60-1 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 4 | STB11NM60A-1 |
ST Microelectronics |
N-Channel MOSFET |
|
| 5 | STB11NM60FD |
ST Microelectronics |
N-Channel MOSFET |
|