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These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applicat.
Order codes
STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 STU11N65M5
VDSS @ RDS(on)
TJmax
max
ID
710 V < 0.48 Ω 9 A
■ Worldwide best RDS(on)
* area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
TAB
TAB
2 3
1
D2PAK
23 1
DPAK
TAB
3 2 1
TO-220FP
3 2 1
TO-220
3 2 1
IPAK
Figure 1. Internal schematic diagram
$ 4!"
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ .
STB11N65M5 - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·High speed switching ·Low gate input resistanc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STB11N65M5-2 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | STB11NB40 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
|
| 3 | STB11NB40-1 |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET |
|
| 4 | STB11NK40Z |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET |
|
| 5 | STB11NK50Z |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET |
|
| 6 | STB11NM60 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | STB11NM60 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 8 | STB11NM60-1 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | STB11NM60-1 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 10 | STB11NM60A-1 |
ST Microelectronics |
N-Channel MOSFET |
|
| 11 | STB11NM60FD |
ST Microelectronics |
N-Channel MOSFET |
|
| 12 | STB11NM60FD |
INCHANGE |
N-Channel MOSFET |
|