STB11NM60T4 - STMicroelectronics

STB11NM60T4 N-CHANNEL Power MOSFET

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status l.

Features

Order codes VDSS (@ TJmax) RDS(on) max. STB11NM60T4 STP11NM60 650 V 0.45 Ω
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance ID 11 A Package D²PAK TO-220 Applications
• Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. .