STB11NM60FD-1 - ST Microelectronics

STB11NM60FD-1 N-Channel MOSFET

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Applications ■ Switching application Order codes Part number STB11NM60FD STB11NM60FD-1 STP11NM60FD STP11NM60FDFP Marking B11NM60F.

Features

Type STB11NM60FD STB11NM60FD-1 STP11NM60FD STP11NM60FDFP
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■ VDSS 600V 600V 600V 600V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID 11A 11A 11A 11A 3 1 3 12 3 1 2 3 1 2 TO-220 TO-220FP 100% avalanche tested High dv/dt and avalanche capabilities Low input capacitance and gate charge Low gate input resistance Tight process control and high manufacturing yields D²PAK D²PAK I²PAK Internal schematic diagram Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge.