STB11NM60A-1 - ST Microelectronics

STB11NM60A-1 N-Channel MOSFET

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than tha.

Features

DERING INFORMATION SALES TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 MARKING P11NM60A P11NM60AFP B11NM60A PACKAGE TO-220 TO-220FP I2PAK PACKAGING TUBE TUBE TUBE March 2002 1/11 DataSheet 4 U .com www.DataSheet4U.com STP11NM60A/STP11NM60AFP/STB11NM60A-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP11NM60A STB11NM60A-1 Value STP11NM60AFP Unit VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total .