The SSU40P06-C is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSU40P06-C meet the RoHS and Green Product requirement with full function reliability approved. TO-263 FEATURES High Speed Power Switching Super Low Gate Charge Green Device Availa.
High Speed Power Switching
Super Low Gate Charge
Green Device Available
MARKING
40P06
= Date Code
PACKAGE INFORMATION
Package
MPQ
TO-263
0.8K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SSU40P06-C
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain Current 1 @VGS=10V
ID
TC=100°C
Pulsed Drain Current 2
IDM
Power Dissipation 3
TC=25°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Data
Ther.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSU40N01 |
SeCoS |
N-Channel MOSFET | |
2 | SSU4N60B |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | SSU04N65 |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
4 | SSU07N65SL |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
5 | SSU102N08S-C |
SeCoS |
N-Channel MOSFET | |
6 | SSU12N70H-C |
SeCoS |
N-Channel Super Junction Power MOSFET | |
7 | SSU130N06S-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
8 | SSU130N06SV-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
9 | SSU1N50B |
Fairchild Semiconductor |
520V N-Channel MOSFET | |
10 | SSU1N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
11 | SSU1N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
12 | SSU24N60H-C |
SeCoS |
N-Channel Super Junction Power MOSFET |