The SSU24N60H-C is power MOSFET using Super Junction Technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss, which provide excellent RDS(ON) and gate charge for mo.
Advanced Super Junction Technology
Super Low Gate Charge
Green Device Available
MARKING
24N60H
= Date Code
PACKAGE INFORMATION
Package
MPQ
TO-263
0.8K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SSU24N60H-C Lead (Pb)-free and Halogen-free
Gate
Drain
TO-263
REF.
A b L4 C L3 L1 E
Millimeter Min. Max. 4.00 4.87 0.51 1.01 0.00 0.30 0.30 0.74
1.50 REF 2.5 REF 9.60 10.67
REF.
c2 b2 D e L L2
Millimeter
Min. Max.
1.07 1.65
1.34 REF
8.0
9.65
2.54 REF
14.6 16.1
1.27 REF
Mounting Pad Layout
Source
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless oth.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSU2N60A |
Fairchild Semiconductor |
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2 | SSU2N60B |
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600V N-Channel MOSFET | |
3 | SSU04N65 |
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4 | SSU07N65SL |
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5 | SSU102N08S-C |
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6 | SSU12N70H-C |
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7 | SSU130N06S-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
8 | SSU130N06SV-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
9 | SSU1N50B |
Fairchild Semiconductor |
520V N-Channel MOSFET | |
10 | SSU1N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
11 | SSU1N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
12 | SSU3055A |
Samsung semiconductor |
ADVANCED POWER MOSFET |