SSU1N60A - Fairchild Semiconductor

SSU1N60A Advanced Power MOSFET

www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ.) SSR/U1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 0.9 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3.

Features

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ.) SSR/U1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 0.9 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetiti.