The SSU102N08S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSU102N08S-C meet the RoHS and Green Product requirement with full function reliability approved. TO-263 FEATURES High Speed Power Switching Super Low Ga.
High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 102N08S Date Code PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 inch ORDER INFORMATION Part Number Type SSU102N08S-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 @VGS=10V Pulsed Drain Current 2 Power Dissipation 3 Operating Junction and Storage Temperature Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case 1 VDS VGS TC=25°C TC=100°C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSU12N70H-C |
SeCoS |
N-Channel Super Junction Power MOSFET | |
2 | SSU130N06S-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
3 | SSU130N06SV-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
4 | SSU1N50B |
Fairchild Semiconductor |
520V N-Channel MOSFET | |
5 | SSU1N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
6 | SSU1N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
7 | SSU04N65 |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
8 | SSU07N65SL |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
9 | SSU24N60H-C |
SeCoS |
N-Channel Super Junction Power MOSFET | |
10 | SSU2N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
11 | SSU2N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
12 | SSU3055A |
Samsung semiconductor |
ADVANCED POWER MOSFET |