The SSU130N06SV-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSU130N06SV-C meet the RoHS and Green Product requirement with full function reliability approved. TO-263 FEATURES Shielded Gate Trench Technology Super L.
Shielded Gate Trench Technology Super Low Gate Charge Green Device Available MARKING 130N06SV =Date Code PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 inch ORDER INFORMATION Part Number Type SSU130N06SV-C Lead (Pb)-free and Halogen-free REF. A b L4 C L3 L1 E Millimeter Min. Max. 4.00 4.87 0.51 1.01 0.00 0.30 0.30 0.74 1.50 REF 2.5 REF 9.60 10.67 REF. c2 b2 D e L L2 Millimeter Min. Max. 1.07 1.65 1.34 REF 8.0 9.65 2.54 REF 14.6 16.1 1.27 REF 2 Drain 1 Gate ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSU130N06S-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
2 | SSU102N08S-C |
SeCoS |
N-Channel MOSFET | |
3 | SSU12N70H-C |
SeCoS |
N-Channel Super Junction Power MOSFET | |
4 | SSU1N50B |
Fairchild Semiconductor |
520V N-Channel MOSFET | |
5 | SSU1N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
6 | SSU1N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
7 | SSU04N65 |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
8 | SSU07N65SL |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
9 | SSU24N60H-C |
SeCoS |
N-Channel Super Junction Power MOSFET | |
10 | SSU2N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
11 | SSU2N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
12 | SSU3055A |
Samsung semiconductor |
ADVANCED POWER MOSFET |