SSU07N65SL - SeCoS Halbleitertechnologie

SSU07N65SL N-Channel MOSFET

The SSU07N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-263 FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available.

Features

Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain REF. A b L4 C L3 L1 E Millimeter Min. Max. 4.00 4.85 0.51 1.00 0.00 0.30 0.30 0.74 1.50 REF 1.78 2.79 9.60 10.67 REF. c2 b2 D e L L2 Millimeter Min. Max. 1.10 1.65 1.34 REF 8.0 9.65 2.54 REF 14.6 15.88 1.27 REF 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Single Pulse Avalanche Energy 1 Sym.