The SSU40n01 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications . FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS and 100% Rg Guaranteed Green Device Availabl.
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS and 100% Rg Guaranteed Green Device Available TO-263 MARKING 40N01 Date Code PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 inch 1 Gate 2 Drain 3 Source REF. A b L4 c L3 L1 E Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5 1.50 REF 2.29 2.79 9.80 10.4 REF. c2 b2 D e L θ L2 Millimeter Min. Max. 1.17 1.45 1.1 1.47 8.5 9.0 2.54 REF 14.6 15.8 0° 8° 1.27 REF ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSU40P06-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
2 | SSU4N60B |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | SSU04N65 |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
4 | SSU07N65SL |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
5 | SSU102N08S-C |
SeCoS |
N-Channel MOSFET | |
6 | SSU12N70H-C |
SeCoS |
N-Channel Super Junction Power MOSFET | |
7 | SSU130N06S-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
8 | SSU130N06SV-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
9 | SSU1N50B |
Fairchild Semiconductor |
520V N-Channel MOSFET | |
10 | SSU1N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
11 | SSU1N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
12 | SSU24N60H-C |
SeCoS |
N-Channel Super Junction Power MOSFET |