Advanced Power MOSFET SSR/U2N60A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) BVDSS = 600 V RDS(on) = 5 Ω ID = 1.8 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VD.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) BVDSS = 600 V RDS(on) = 5 Ω ID = 1.8 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC ) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSU2N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
2 | SSU24N60H-C |
SeCoS |
N-Channel Super Junction Power MOSFET | |
3 | SSU04N65 |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
4 | SSU07N65SL |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
5 | SSU102N08S-C |
SeCoS |
N-Channel MOSFET | |
6 | SSU12N70H-C |
SeCoS |
N-Channel Super Junction Power MOSFET | |
7 | SSU130N06S-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
8 | SSU130N06SV-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
9 | SSU1N50B |
Fairchild Semiconductor |
520V N-Channel MOSFET | |
10 | SSU1N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
11 | SSU1N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
12 | SSU3055A |
Samsung semiconductor |
ADVANCED POWER MOSFET |