SSU2N60A |
Part Number | SSU2N60A |
Manufacturer | Fairchild Semiconductor |
Description | Advanced Power MOSFET SSR/U2N60A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 2... |
Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.)
BVDSS = 600 V RDS(on) = 5 Ω ID = 1.8 A
D-PAK I-PAK
2
11
3
2 3
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 oC ) Continuous Drain Current (TC=100 oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy Avalanche Current
Repetitive Avalanche... |
Document |
SSU2N60A Data Sheet
PDF 261.94KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSU2N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
2 | SSU24N60H-C |
SeCoS |
N-Channel Super Junction Power MOSFET | |
3 | SSU04N65 |
SeCoS Halbleitertechnologie |
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4 | SSU07N65SL |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
5 | SSU102N08S-C |
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