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SSU1N60A |
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| Part Number | SSU1N60A |
| Manufacturer | Fairchild Semiconductor |
| Description | www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Cur... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ.)
SSR/U1N60A
BVDSS = 600 V RDS(on) = 12 Ω ID = 0.9 A
D-PAK
2 1 3 1
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetiti... |
| Document |
 SSU1N60A Data Sheet
PDF 286.48KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSU1N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 2 | SSU1N50B |
Fairchild Semiconductor |
520V N-Channel MOSFET |
|
| 3 | SSU102N08S-C |
SeCoS |
N-Channel MOSFET |
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| 4 | SSU12N70H-C |
SeCoS |
N-Channel Super Junction Power MOSFET |
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| 5 | SSU130N06S-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
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