SSM3K329R - Toshiba Semiconductor

SSM3K329R Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS SSM3K329R 1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit SOT-23F SSM3K329R 1: Gate.

Features

(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit SOT-23F SSM3K329R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-02 2021-10-22 Rev.1.0 SSM3K329R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
�) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±12 V Drain current (DC) (Not.