SSM3K320T - Toshiba

SSM3K320T Silicon N-Channel MOSFET

SSM3K320T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K320T High-Speed Switching Applications • 4.5 V drive • Low ON-resistance : Ron = 77 mΩ (max) (@VGS = 4.5 V) : Ron = 50 mΩ (max) (@VGS = 10 V) Unit: mm +0.2 2.8-0.3 +0.2 1.6-0.1 0.4±0.1 0～0.1 0.15 0.16±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol R.

Features

re within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). TSM 1: Gate 2: Source 3: Drain JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10mg (typ.) Note 1: The junction temperature should not exceed 150°C during use. Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking 3 Equivalent Circuit (top view) 3 KDZ 1 2 1 2 St.