SSM3K318R - Toshiba

SSM3K318R Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS SSM3K318R 1. Applications • Load Switches • Ultra-High-Speed Switching 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 107 mΩ (max) (@VGS = 10 V) 3. Packaging and Pin Assignment SOT-23F SSM3K318R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1.

Features

(1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 107 mΩ (max) (@VGS = 10 V) 3. Packaging and Pin Assignment SOT-23F SSM3K318R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2015-02 2016-08-23 Rev.2.0 SSM3K318R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (Note 1) ID 2.5 A Drain current (pulsed) (Note 1) IDP 5 Power dissipation (.