SSM3K324R - Toshiba Semiconductor

SSM3K324R Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS SSM3K324R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Pin Assignment SOT-23F SSM3K324R 1: Gate 2: Sour.

Features

(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Pin Assignment SOT-23F SSM3K324R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-10 2021-09-14 Rev.3.0 SSM3K324R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
�) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ± 12 Drain current (DC) (Note 1) .